Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors (2015)

First Author: Uren M
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2015.2442293

Publication URI: http://dx.doi.org/10.1109/led.2015.2442293

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 8