Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory (2015)
Attributed to:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.92.235419
Publication URI: http://dx.doi.org/10.1103/physrevb.92.235419
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 23
ISSN: 1098-0121