Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels (2014)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.90.085309
Publication URI: http://dx.doi.org/10.1103/physrevb.90.085309
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 8
ISSN: 1098-0121