Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap (2013)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4798590
Publication URI: http://dx.doi.org/10.1063/1.4798590
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 12
ISSN: 0003-6951