Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap (2013)

First Author: Latkowska M
Attributed to:  InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4798590

Publication URI: http://dx.doi.org/10.1063/1.4798590

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 12

ISSN: 0003-6951