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Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold (2015)

First Author: Indalecio G

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1166/jolpe.2015.1371

Publication URI: http://dx.doi.org/10.1166/jolpe.2015.1371

Type: Journal Article/Review

Parent Publication: Journal of Low Power Electronics

Issue: 2