📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs (2016)

First Author: Seoane N

Attributed to: Modelling of Carrier Transport in Ultra Thin Body Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2516921

Publication URI: http://dx.doi.org/10.1109/ted.2016.2516921

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 3