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Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon. (2015)

First Author: Pristovsek M

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201451591

PubMed Identifier: 26212392

Publication URI: http://europepmc.org/abstract/MED/26212392

Type: Journal Article/Review

Volume: 252

Parent Publication: Physica status solidi. B, Basic solid state physics : PSS

Issue: 5

ISSN: 0370-1972