📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy (2013)

First Author: Huang C

Attributed to: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1080/14786435.2013.805272

Publication URI: http://dx.doi.org/10.1080/14786435.2013.805272

Type: Journal Article/Review

Parent Publication: Philosophical Magazine

Issue: 23

ISSN: 14786435