A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects (2015)

First Author: Cobley R
Attributed to:  Manufacturing and Application of Next Generation Chalcogenides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2014.2357577

Publication URI: http://dx.doi.org/10.1109/jeds.2014.2357577

Type: Journal Article/Review

Parent Publication: IEEE Journal of the Electron Devices Society

Issue: 1