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High temperature pulsed-gate robustness testing of SiC power MOSFETs (2015)

First Author: Fayyaz A

Attributed to: Small items of research equipment at the University of Nottingham funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2015.06.141

Publication URI: http://dx.doi.org/10.1016/j.microrel.2015.06.141

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability

Issue: 9-10