Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature (2015)

First Author: Jahdi S
Attributed to:  Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2014.2333474

Publication URI: http://dx.doi.org/10.1109/tpel.2014.2333474

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 6