Segregation of In to dislocations in InGaN. (2015)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/nl5036513
PubMed Identifier: 25594363
Publication URI: http://europepmc.org/abstract/MED/25594363
Type: Journal Article/Review
Volume: 15
Parent Publication: Nano letters
Issue: 2
ISSN: 1530-6984