Dislocation core structures in Si-doped GaN (2015)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4937457
Publication URI: http://dx.doi.org/10.1063/1.4937457
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 24