Structure and strain relaxation effects of defects in In x Ga1- x N epilayers (2014)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4894688
Publication URI: http://dx.doi.org/10.1063/1.4894688
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 10