The dissociation of the [ a + c ] dislocation in GaN (2013)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1080/14786435.2013.797617
Publication URI: http://dx.doi.org/10.1080/14786435.2013.797617
Type: Journal Article/Review
Parent Publication: Philosophical Magazine
Issue: 28-30