Mg doping affects dislocation core structures in GaN. (2013)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevlett.111.025502
PubMed Identifier: 23889417
Publication URI: http://europepmc.org/abstract/MED/23889417
Type: Journal Article/Review
Volume: 111
Parent Publication: Physical review letters
Issue: 2
ISSN: 0031-9007