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Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs (2015)

First Author: Bonyadi R

Attributed to: Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2015.2388512

Publication URI: http://dx.doi.org/10.1109/tpel.2015.2388512

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 12