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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices (2015)

First Author: Jahdi S

Attributed to: Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce.2015.7309975

Publication URI: http://dx.doi.org/10.1109/ecce.2015.7309975

Type: Conference/Paper/Proceeding/Abstract