Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation (2015)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/epe.2015.7309093
Publication URI: http://dx.doi.org/10.1109/epe.2015.7309093
Type: Conference/Paper/Proceeding/Abstract