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Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation (2015)

First Author: Jahdi S

Attributed to: Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/epe.2015.7309093

Publication URI: http://dx.doi.org/10.1109/epe.2015.7309093

Type: Conference/Paper/Proceeding/Abstract