Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation="LaTeX">$_{\bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature (2015)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2014.2333474
Publication URI: http://dx.doi.org/10.1109/tpel.2014.2333474
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Power Electronics
Issue: 6