The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs (2015)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tie.2014.2326999
Publication URI: http://dx.doi.org/10.1109/tie.2014.2326999
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Industrial Electronics
Issue: 1