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Novel Complementary Resistive Switch Crossbar Memory Write and Read Schemes (2015)

First Author: Yang Y

Attributed to: Yield and reliability enhancement techniques for novel memory devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2015.2394450

Publication URI: http://dx.doi.org/10.1109/tnano.2015.2394450

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 2