Nanofabrication of high aspect ratio (~50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching (2012)
Attributed to:
Silicon Resonant Tunnelling Diodes and Circuits
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.4755835
Publication URI: http://dx.doi.org/10.1116/1.4755835
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 6