Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well (2013)

First Author: Croxall A
Attributed to:  Nanoelectronic Based Quantum Physics- Technology and Applications. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4793658

Publication URI: http://dx.doi.org/10.1063/1.4793658

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 8