📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements (2014)

First Author: Guo Y

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4869553

Publication URI: http://dx.doi.org/10.1063/1.4869553

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 11