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Defect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devices (2015)

First Author: Robertson J

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4913832

Publication URI: http://dx.doi.org/10.1063/1.4913832

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11