Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS 2 (2015)
Attributed to:
Manufacturing and Application of Next Generation Chalcogenides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.jpcc.5b05048
Publication URI: http://dx.doi.org/10.1021/acs.jpcc.5b05048
Type: Journal Article/Review
Parent Publication: The Journal of Physical Chemistry C
Issue: 35