Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells (2015)

First Author: Tappertzhofen S
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2015.2411774

Publication URI: http://dx.doi.org/10.1109/tnano.2015.2411774

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 3