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Planar InAs p-i-n photodiodes fabricated using ion implantation (2014)

First Author: White B

Attributed to: Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2014.6995393

Publication URI: http://dx.doi.org/10.1109/ipcon.2014.6995393

Type: Conference/Paper/Proceeding/Abstract