Impact of Dielectric Formation and Processing Techniques on the Operation of 4H-SiC MOSFETs
Attributed to:
Active Sensor Structures for Extreme Environments
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.5772/61067
Publication URI: http://dx.doi.org/10.5772/61067
Type: Book Chapter
Book Title: Advanced Silicon Carbide Devices and Processing (2015)
ISBN: 978-953-51-2168-8