Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films (2011)
Attributed to:
Support for the UK Car-Parrinello Consortium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.84.125316
Publication URI: http://dx.doi.org/10.1103/physrevb.84.125316
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 12