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Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films (2011)

First Author: Mitin V

Attributed to: Support for the UK Car-Parrinello Consortium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.84.125316

Publication URI: http://dx.doi.org/10.1103/physrevb.84.125316

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 12