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Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111). (2011)

First Author: Zhang KH

Attributed to: Many-body effects in quantized semiconductor electron accumulation layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/23/33/334211

PubMed Identifier: 21813945

Publication URI: http://europepmc.org/abstract/MED/21813945

Type: Journal Article/Review

Volume: 23

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 33

ISSN: 0953-8984