Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement. (2010)
Attributed to:
Structural and electronic properties of InN surfaces and interfaces
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/rcm.4623
PubMed Identifier: 20552690
Publication URI: http://europepmc.org/abstract/MED/20552690
Type: Journal Article/Review
Volume: 24
Parent Publication: Rapid communications in mass spectrometry : RCM
Issue: 14
ISSN: 0951-4198