The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy (2013)
Attributed to:
Growth and Electronic Properties of InN and N-rich Alloys
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4795790
Publication URI: http://dx.doi.org/10.1063/1.4795790
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 11