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Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition. (2016)

First Author: Tan H

Attributed to: Phase Change Materials based Tunable NEMS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsami.5b08295

PubMed Identifier: 26756350

Publication URI: http://europepmc.org/abstract/MED/26756350

Type: Journal Article/Review

Volume: 8

Parent Publication: ACS applied materials & interfaces

Issue: 3

ISSN: 1944-8244