Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition. (2016)
Attributed to:
Wearable and flexible technologies enabled by advanced thin-film manufacture and metrology
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsami.5b08295
PubMed Identifier: 26756350
Publication URI: http://europepmc.org/abstract/MED/26756350
Type: Journal Article/Review
Volume: 8
Parent Publication: ACS applied materials & interfaces
Issue: 3
ISSN: 1944-8244