Field-effect tunneling transistor based on vertical graphene heterostructures. (2012)
Attributed to:
The National Graphene Institute
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1126/science.1218461
PubMed Identifier: 22300848
Publication URI: http://europepmc.org/abstract/MED/22300848
Type: Journal Article/Review
Volume: 335
Parent Publication: Science (New York, N.Y.)
Issue: 6071
ISSN: 0036-8075