GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer (2010)
Attributed to:
Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/43/6/065402
Publication URI: http://dx.doi.org/10.1088/0022-3727/43/6/065402
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 6
ISSN: 0022-3727