Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers (2016)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2016.2537835
Publication URI: http://dx.doi.org/10.1109/led.2016.2537835
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 5
ISSN: 0741-3106