Subthreshold Mobility in AlGaN/GaN HEMTs (2016)
Attributed to:
GaN Electronics: RF Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2542588
Publication URI: http://dx.doi.org/10.1109/ted.2016.2542588
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 5
ISSN: 0018-9383