Intrinsic electron traps in atomic-layer deposited HfO2 insulators (2016)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4952718
Publication URI: http://dx.doi.org/10.1063/1.4952718
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 22