Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE (2016)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/49/43/435107
Publication URI: http://dx.doi.org/10.1088/0022-3727/49/43/435107
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 43