Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE (2016)

First Author: Kesaria M
Attributed to:  InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/49/43/435107

Publication URI: http://dx.doi.org/10.1088/0022-3727/49/43/435107

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 43