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A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection. (2016)

First Author: Gao DZ

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0957-4484/27/50/505207

PubMed Identifier: 27855121

Publication URI: http://europepmc.org/abstract/MED/27855121

Type: Journal Article/Review

Volume: 27

Parent Publication: Nanotechnology

Issue: 50

ISSN: 0957-4484