Deep electron and hole polarons and bipolarons in amorphous oxide (2016)

First Author: Kaviani M
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.94.020103

Publication URI: http://dx.doi.org/10.1103/physrevb.94.020103

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 2