Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs (2016)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2016.2595400
Publication URI: http://dx.doi.org/10.1109/led.2016.2595400
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 9