Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation (2016)
Attributed to:
Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2550865
Publication URI: http://dx.doi.org/10.1109/ted.2016.2550865
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 6