📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth (2015)

First Author: Simmons R

Attributed to: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4932122

Publication URI: http://dx.doi.org/10.1063/1.4932122

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 14