Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth (2015)

First Author: Simmons R
Attributed to:  Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4932122

Publication URI: http://dx.doi.org/10.1063/1.4932122

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 14