InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product. (2016)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.24.024242
PubMed Identifier: 27828254
Publication URI: http://europepmc.org/abstract/MED/27828254
Type: Journal Article/Review
Volume: 24
Parent Publication: Optics express
Issue: 21
ISSN: 1094-4087